Samsung is set to significantly increase its production of HBM chips this year, with plans to triple its output. This increase comes as the company continues to push forward with the development of its fifth-generation HBM and 128 GB DDR5 products. The goal is to strengthen Samsung’s position in the high-performance, high-capacity memory market, particularly in the AI era.
One interesting development is Samsung’s introduction of the industry’s first 12-stack HBM3E DRAM chip, the HBM3E 12H, which is currently in the sampling stage with customers. This comes as the company prepares to ramp up production of its HBM products, with a roadmap indicating a significant surge in shipments by 2026.
Looking ahead, Samsung is already planning for its future HBM4 and sixth-generation HBM chip, codenamed “Snowbolt.” The company aims to improve efficiency by incorporating a buffer die at the bottom layer of stacked memory. This strategic move is a response to the escalating AI race, where the speed of processing is of paramount importance.
Despite competition from SK Hynix, Samsung is determined to establish itself as a major player in the HBM chip market. With both companies investing heavily in production facilities and technological advancements, the race for dominance in the memory chip industry is heating up. It will be interesting to see how Samsung’s innovations and investments pay off in the coming years.
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